Abstract:Monocrystalline silicon is an important substrate or base material for manufacturing integrated circuit chips, mirrors, etc. However, it is a typical hard and brittle material, which is very prone to produce defects during processing. This paper investigates the electronic structure and optical properties of sphalerite monocrystalline silicon with vacancy concentrations of 1.5625%, 3.125%, 4.6875%, and 6.25% using the first principles method based on density functional theory. The results demonstrate that the introduction of impurities results in the formation of impurity bands (IB) within the band structure, thereby facilitating electronic transitions. However, vacancy defects do not alter the properties of monocrystalline silicon as an indirect semiconductor. Regarding optical properties, an increase in defect concentration leads to a decrease in the macroscopic symmetry of the system, resulting in noticeable anisotropy in each property. Also found that the main spectral peaks of the defect system are red-shifted, and the vacancy defects introduce new peaks in the near-infrared region and the visible region with increasing intensity, but the peaks in the ultraviolet region gradually decrease with the increase of the defect concentration. The refractive index peak gradually decreases with the increase of defect concentration, and the calculated average refractive index is around 1.2. In the high-energy region, the refractive index takes a very small value, and the reflection of electromagnetic waves from the doped system is also weak at this time, which indicates that the system has a high transmittance property. Importantly, there is a higher intensity of energy loss at photon energies around 16.5 eV. Consequently, these calculations are deemed valuable for advancing research and applications involving monocrystalline silicon optical mirrors.

Implantation Study of Silicon Cluster Ions Si+n(n=1-3)Into Si Crystal

Implantation Study of Carbon Clusters Cn+(n=1—5) into NaCl Crystal

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Nitrogen Ion-implantation in Silicon

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

Damage production in silicon by MeV Si cluster irradiation

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Si+ Implantation: A Pretreatment Method for Diamond Nucleation on a Si Wafer

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Investigation on CR39 implanted by Cn+ (n=1- 5) cluster ions

Investigation on CR39 Implanted Byc_n~+(n=1-5)Cluster Ions

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

Influence of ion implantation on properties and structure of silicon nitride

Simulation on Ion Implantation into SiGe Substrate

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Atomic-scale revealing defects in ion irradiated 4H-SiC

Ion-implantation-induced patterns formation on silicon substrates

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Computational analysis of electronic structure and optical properties of monocrystalline silicon-vacancy defect system based on density functional theory