Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide

Direct simulation of ion beam induced stressing and amorphization of silicon

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Understanding the Changes in Mechanical Properties Due to the Crystalline-to-amorphization Transition in SiC

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Grain Boundary Effects on Defect Production and Mechanical Properties of Irradiated Nanocrystalline Sic

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon