Abstract:Understanding the mechanical properties of structural materials under an irradiation environment stands as a major challenge for developing advanced nuclear systems. In this paper, the mechanical properties, including the Young's modulus, yield stress, and hardness, of SiC samples irradiated by neutron and heavy ions (3 MeV C and Si ions) have been investigated by nanoindentation measurement. When the load-depth curves were analyzed by the widely used Oliver-Pharr method, for the samples irradiated at the same displacement damage level (0.1 and 0.2 dpa), both the elastic modulus and hardness of the ion irradiated SiC are significantly higher compared with those of neutron irradiated samples. The discrepancy is mainly attributed to the irradiation induced surface lateral stress in ion irradiated samples, which cannot be taken into account for the Oliver-Pharr method. After carefully considering this effect by the finite element method in simulating the load-depth curves, both the Young's modulus and yield stress of ion irradiated samples agree well with those of neutron irradiated samples. This study reveals that by the combined method of nanoindentation and finite element, the mechanical properties, including the Young's modulus, yield stress and hardness, for neutron irradiated SiC can be reasonably evaluated by MeV heavy ion irradiation.

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Effects of Nitrogen Doping on Vacancy-Oxygen Complexes in Neutron Irradiated Czochralski Silicon

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Effect of Germanium Doping on Thermal Evolution of Neutron Irradiation Induced Defects in Czochralski Si

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Growth and Ripening of Oxygen Precipitation in Neutron-Irradiated Czochralski Silicon

The Intrinsic Gettering in Neutron Irradiation Czochralski-Silicon

Mechanical properties of 6H-SiC irradiated by neutron and MeV heavy ions: A nanoindentation and finite element method study

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Oxygen Precipitation in Neutron‐irradiated Czochralski Silicon Annealed at Elevated Temperature

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending method