Abstract:We studied the photoluminescence spectra of silicon and phosphorus co-implanted silica thin films on (100) silicon substrates as a function of isothermal annealing time. The rapid phase segregation, formation, and growth dynamics of intrinsic silicon nanocrystals are observed, in the first 600 s of rapid thermal processing, using dark field mode X-TEM. For short annealing times, when the nanocrystal size distribution exhibits a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts further to the red than the intrinsic nanocrystals. These results indicate the existence of competing pathways for the donor electron, which depends strongly on the nanocrystal size. In samples containing a large density of relatively small nanocrystals, the tendency of phosphorus to accumulate at the nanocrystal-oxide interface means that ionization results in a passivation of dangling bond (Pb-centre) type defects, through a charge compensation mechanism. As the size distribution evolves with isothermal annealing, the density of large nanocrystals increases at the expense of smaller nanocrystals, through an Ostwald ripening mechanism, and the majority of phosphorus atoms occupy substitutional lattice sites within the nanocrystals. As a consequence of the smaller band-gap, ionization of phosphorus donors at these sites increases the free carrier concentration and opens up an efficient, non-radiative de-excitation route for photo-generated electrons via Auger recombination. This effect is exacerbated by an enhanced diffusion in phosphorus doped glasses, which accelerates silicon nanocrystal growth.

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Direct simulation of ion beam induced stressing and amorphization of silicon

Ion Irradiation Induced Nucleation and Growth of Nanoparticles in Amorphous Silicon Carbide at Elevated Temperatures

The mechanism of ion induced amorphization in Si

Planar Nucleation and Crystallization in the Annealing Process of Ion Implanted Silicon

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Nucleation of silicon nanoparticles in amorphous silicon dioxide matrices

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Temperature Dependence of Irradiation-Induced Nanocrystallization in Amorphous Silicon Carbide

Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Thermal Activation of the Crystallization Kinetics of Amorphous Silicon

Atomistic structure of amorphous silicon nitride from classical molecular dynamics simulations

IRRADIATION OF ELECTRON WITH HIGH ENERGY INDUCED MICROCRYSTALLIZATION OF AMORPHOUS SILICON

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Microscopic mechanisms of pressure-induced amorphous-amorphous transitions and crystallisation in silicon

Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Raman Study of Amorphization in Nanocrystalline 3c–sic Irradiated with C+ and He+ Ions

Epr Studies On Defect Production And Its Annealing Behavior In Silicon After High Fluence Ar Ion Irradiation