Thermal Activation of the Crystallization Kinetics of Amorphous Silicon

T. Mohammed-Brahim,D. Briand,K. Kis-Sion,D. Guillet,A.C. Salaün,O. Bonnaud
DOI: https://doi.org/10.1557/proc-398-387
1995-01-01
MRS Proceedings
Abstract:ABSTRACT Solid Phase Crystallization of amorphous silicon films, deposited by the Low Pressure Chemical Vapor Deposition technique, is studied by in-situ monitoring the film conductance. The crystal growth rate V G , deduced from this measurement, was found to be thermally activated. The activation energy E behaviour for films with different doping varying in a great range, from undoped to 4×10 19 cm −3 , was then deduced. This behaviour, described for the first time in this work, shows a constant E for undoped and weak doping, then a high decrease after a doping value threshold. The undoped films show a decreasing E when the deposition rate increases i.e. when the structure of the amorphous deposited film tends to correspond to the relaxed amorphous network. All these new results are used to introduce a crystallization model based on a crystalline-amorphous double phase and on the charge of defects at the crystal-amorphous interface.
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