Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Raman Spectroscopy Analysis of Excimer Laser Crystallized Amorphous Silicon Films

Recrystallization of 75as Implanted Silicon by a Free Running Ruby Laser

INTERPRETATION OF OPTICAL DIAGNOSTICS FOR THE ANALYSIS OF LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILMS

In Situ Visualization of Interface Dynamics During the Double Laser Recrystallization of Amorphous Silicon Thin Films

Single Shot Excimer Laser Crystallization of Silicon Films Deposited by LPCVD

Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

Thermal Transport in Melting and Recrystallization of Amorphous and Polycrystalline Si Thin Films

Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Relationship Between Fluence Gradient and Lateral Grain Growth in Spatially Controlled Excimer Laser Crystallization of Amorphous Silicon Films

Ultra-fast laser-induced recrystallization of amorphous silicon films

Application of 532 nm solid nanosecond laser in crystallization of amorphous silicon thin films

Room Temperature Crystallization of Amorphous Silicon Film by Ultrashort Femtosecond Laser Pulses

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

Ultra-fast laser-induced crystallization of amorphous silicon films - (LPM 2001)

Analysis of the microstructure of laser crystallized hydrogenated amorphous silicon films by spectroscopic ellipsometry

High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.