Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

Dynamical Process of Krf Pulsed Excimer Laser Crystallization of Ultrathin Amorphous Silicon Films to Form Si Nano-Dots

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

KrF Laser-Induced Nanometer Si Crystallites Formation and Tem Observation

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Formation of nanocrystals in a-Si thin films induced by pulsed laser ultraviolet irradiation

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Thermodynamics of Face-Centered-cubic Silicon Nucleation at the Nanoscale from Laser Ablation.

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

One-dimensional, Self-Organized Si Dots Grown by Pulsed Laser Melting of A-Si:H Films

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

Effects of Laser Fluence on Near-Field Surface Nanostructuring

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization