Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Light intensity distribution in laser interference crystallization by using a phase-shift grating and Talbot Effect

Diffractive Characteristics of Laser Assisted Chemical Etching GaAs

Light Intensity Distribution in Laser Interference Crystallization and the Fabrication of Two-Dimensional Periodic Nanocrystalline Silicon Array

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

A Study on Length Traceability and Diffraction Efficiency of Chromium Gratings

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Characterization of Dual-Periodic Structures with Optical Scattering

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Formation of nanocrystals in a-Si thin films induced by pulsed laser ultraviolet irradiation

LRTM effect and electronic crystal imaging on silicon surface

The Study of the Microstructures in Ar+ Laser Crystallized Asi:H Films for Active Layer of TFT