Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser

Tingyi Gu,Hyuncheol Jeong,Kengran Yang,Fan Wu,Nan Yao,Rodney D. Priestley,Claire E. White,Craig B. Arnold
DOI: https://doi.org/10.1063/1.4975067
2016-12-13
Abstract:The low activation energy associated with amorphous chalcogenide structures offers broad tunability of material properties with laser-based or thermal processing. In this paper, we study near-bandgap laser induced anisotropic crystallization in solution processed arsenic sulfide. The modified electronic bandtail states associated with laser irritation lead to a distinctive photoluminescence spectrum, compared to thermally annealed amorphous glass. Laser crystalized materials exhibit a periodic subwavelength ripples structure in transmission electron microscopy experiments and show polarization dependent photoluminescence. Analysis of the local atomic structure of these materials using laboratory-based X-ray pair distribution function analysis indicates that laser irradiation causes a slight rearrangement at the atomic length scale, with a small percentage of S-S homopolar bonds converting to As-S heteropolar bonds. These results highlight fundamental differences between laser and thermal processing in this important class of materials.
Materials Science,Mesoscale and Nanoscale Physics,Optics
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