Abstract:The relationship between the reflectivity of the Ge2Sb2Te5 thin films, which are as-deposited and melt-quenched states separately, and the pulsed laser time was investigated by the focused pulse laser, and it was found that the reflectivity changes for the two kinds of: samples are different. On the basis of the principled the droplet formation in the gas-liquid system and the basic ideas of the statistical physics, the crystallization mechanism and course of the Ge2Sb2Te5 thin films, which are in as-deposited and melt-quenched states separately, were analyzed and studied in detail. The crystalline nucleus can't form if Ge2Sb2Te5 is in below-saturation or saturation state, different size crystalline nucleus can form if it is in super-saturation. While only the crystalline nucleus which are more than the critical size can grow into crystalline. In addition, the stress, decreasing the crystallization energy barrier and increasing the super-saturation degree of the amorphous Ge2Sb2Te5, is the leading factor causing the different relationships of reflectivity change with pulsed laser width between the as-deposited and melt-quenched Ge2Sb2Te5 thin films. At the same time, on the basis of the analytical results, the reflectivity change characters and laws of the two kinds of the samples under the focused pulse laser were explained in detail.

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Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

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Dynamics of Ultrafast Crystallization in As-Deposited Ge2sb2te5 Films

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

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Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

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Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Modeling of the Temperature Field in the Amorphous Ge2Sb2Te5 Film Induced by a Picosecond Laser with a Body Heat Source

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

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