Abstract:The relationship between the reflectivity of the Ge2Sb2Te5 thin films, which are as-deposited and melt-quenched states separately, and the pulsed laser time was investigated by the focused pulse laser, and it was found that the reflectivity changes for the two kinds of: samples are different. On the basis of the principled the droplet formation in the gas-liquid system and the basic ideas of the statistical physics, the crystallization mechanism and course of the Ge2Sb2Te5 thin films, which are in as-deposited and melt-quenched states separately, were analyzed and studied in detail. The crystalline nucleus can't form if Ge2Sb2Te5 is in below-saturation or saturation state, different size crystalline nucleus can form if it is in super-saturation. While only the crystalline nucleus which are more than the critical size can grow into crystalline. In addition, the stress, decreasing the crystallization energy barrier and increasing the super-saturation degree of the amorphous Ge2Sb2Te5, is the leading factor causing the different relationships of reflectivity change with pulsed laser width between the as-deposited and melt-quenched Ge2Sb2Te5 thin films. At the same time, on the basis of the analytical results, the reflectivity change characters and laws of the two kinds of the samples under the focused pulse laser were explained in detail.

Influence of laser energy on the crystallization of Ge 2Sb 2Te 5 thin film prepared by pulsed laser deposition

Influence of laser energy on the crystallization of Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin film prepared by pulsed laser deposition

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

A Study on the Crystallization Behavior of Sn-doped Amorphous Ge2Sb2Te5 by Ultraviolet Laser Radiation

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films

Optical Constants of Laser-Induced Crystalline Ge2Sb2Te5 Phase-Change Media

Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials