Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

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Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Optical Constants of Laser-Induced Crystalline Ge2Sb2Te5 Phase-Change Media

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Influence of laser energy on the crystallization of Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin film prepared by pulsed laser deposition

Influence of laser energy on the crystallization of Ge 2Sb 2Te 5 thin film prepared by pulsed laser deposition

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Study on Optical Constants of Laser-Induced Crystalline Ag11In12Te26Sb51 Phase-Change Media

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Thermal And Laser-Induced Phase-Transformation In Rf-Sputtered Gesb2te4 Thin-Films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

A Study on the Crystallization Behavior of Sn-doped Amorphous Ge2Sb2Te5 by Ultraviolet Laser Radiation

Phase Change Behaviors of In-Ge-Sb-Te Alloy