Abstract:The relationship between the reflectivity of the Ge2Sb2Te5 thin films, which are as-deposited and melt-quenched states separately, and the pulsed laser time was investigated by the focused pulse laser, and it was found that the reflectivity changes for the two kinds of: samples are different. On the basis of the principled the droplet formation in the gas-liquid system and the basic ideas of the statistical physics, the crystallization mechanism and course of the Ge2Sb2Te5 thin films, which are in as-deposited and melt-quenched states separately, were analyzed and studied in detail. The crystalline nucleus can't form if Ge2Sb2Te5 is in below-saturation or saturation state, different size crystalline nucleus can form if it is in super-saturation. While only the crystalline nucleus which are more than the critical size can grow into crystalline. In addition, the stress, decreasing the crystallization energy barrier and increasing the super-saturation degree of the amorphous Ge2Sb2Te5, is the leading factor causing the different relationships of reflectivity change with pulsed laser width between the as-deposited and melt-quenched Ge2Sb2Te5 thin films. At the same time, on the basis of the analytical results, the reflectivity change characters and laws of the two kinds of the samples under the focused pulse laser were explained in detail.

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Femtosecond Laser-induced Crystallization of Amorphous Sb2Te3 film and Coherent Phonon Spectroscopy Characterization and Optical Injection of Electron Spins

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Optical–electrical Hybrid Operation with Amorphous Ge 1 Sb 4 Te 7 Phase Change Thin Films

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Femtosecond Laser Pulse Induced Phase Transition of Cr-Doped Sb2te1 Films Studied with A Pump-Probe System

Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5

Space-selective Precipitation of Ge Crystalline Patterns in Glasses by Femtosecond Laser Irradiation.

Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Influence of laser energy on the crystallization of Ge 2Sb 2Te 5 thin film prepared by pulsed laser deposition

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation