Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

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Ultrafast reversible phase transitions in GeSbTe films triggered by femtosecond laser pulse

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An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

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Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Optical–electrical Hybrid Operation with Amorphous Ge 1 Sb 4 Te 7 Phase Change Thin Films

Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

Fast Phase Transitions Induced by Picosecond Electrical Pulses on Phase Change Memory Cells

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation