Abstract:Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

Ultrafast reversible phase transitions in GeSbTe films triggered by femtosecond laser pulse

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Optical–electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

Fast Phase Transitions Induced by Picosecond Electrical Pulses on Phase Change Memory Cells

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Optical–electrical Hybrid Operation with Amorphous Ge 1 Sb 4 Te 7 Phase Change Thin Films

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films