Abstract:Phase‐change materials (PCMs) show a large property contrast that is exploited in memory storage. Fragile‐to‐strong transitions (FST) aid the application of PCMs, as ultrafast crystallization and amorphous phase stability are simultaneously realized. Here, for the PCM Ge3Sb6Te5 the viscosity is measured over sixteen orders of magnitude, clearly demonstrating an FST. Chalcogenide phase‐change materials combine a remarkable set of properties that makes them promising candidates for future non‐volatile memory applications. Binary data storage exploits the high contrast in electrical and optical properties between the covalent amorphous and metavalent crystalline phase. Here the authors perform an analysis of the liquid phase kinetics of the phase‐change material Ge3Sb6Te5, which is the key to ultrafast switching speeds. By employing four experimental techniques, the viscosity is measured over sixteen orders of magnitude despite its propensity for fast crystallization. These measurements reveal that the liquid undergoes a transition in viscosity–temperature dependence associated with a liquid–liquid phase transition. The system exhibits a shallow viscosity change with temperature near the glass transition which stabilizes the memory cells in the amorphous state and which limits the severity of relaxation processes. Meanwhile, when heated during the writing process, the fragility increases to more than double, causing the viscosity to drop rapidly enabling a nanosecond crystallization speed. This change in viscosity–temperature dependence is highly unusual among glass forming liquids and is reminiscent of the behavior of water. This viscosity transition is also key to the technological success of phase‐change materials for computer memory applications.

Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb 2 Te 3 -GeTe superlattices

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

Time-Domain Separation of Optical Properties From Structural Transitions in Resonantly Bonded Materials

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

Ultrafast reversible phase transitions in GeSbTe films triggered by femtosecond laser pulse

Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation

Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Broadband and ultrafast terahertz modulation with GeTe thin films

Fragile‐to‐Strong Transition in Phase‐Change Material Ge3Sb6Te5