Abstract:In this work, phase change chalcogenide Ge2Sb2Te5 (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical constants (refractive index and extinction coefficient), of such alloys were systematically studied by investigating their thermally and photo-thermally induced switching between different phases. The results show that GST films are highly tunable in microstructure and optical constants, either by post-annealing at 160 degrees C, 200 degrees C, 250 degrees C and 350 degrees C, respectively, or by laser irradiation of 1 mW, 3 mW, 5 mW and 10 mW power with beam diameter of 7 m at 532 nm, respectively. From the structural analysis, we can clearly observe different crystallinities and chemical bonding in the different post-treated GST films. The optical constants of GST films under various phases were obtained from spectrophotometry, by fitting their transmittance data with the Tauc-Lorentz (TL) dispersion model. The refractive index and extinction coefficient exhibit notable change upon annealing and laser irradiation, specifically at 1550 nm, from 3.85 (amorphous) to 6.5 (crystalline) in refractive index. The optical constants have been proved capable of fine tuning via the laser irradiation method. Hence, the pronounced adjustability in optical properties due to rapid and repeatable phase change render GST suitable for tunable photonic devices.

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Optical and Short-Wavelength Recording Properties of InSbTe Phase Change Thin Films

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Optical recording performance of In47Sb14Te39 phase change thin films using 514.5nm wavelength laser beam

Physical Properties and Optical Recording Performance of In47sb14te39 Phase Change Thin Films Using 514.5 Nm Wavelength Laser Beam

Preparation And Short-Wavelength Optical Storage Properties Of Ge-Te Alloy Phase Change Thin Film

Short-wavelength phase-change optical data storage in In-Sb-Te alloy films

Optical and Short-wavelength Recording Properties of Ag 8 In 14 Sb 55 Te 23 Phase-change Films

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

Optical properties of Ag8In14Sb55Te23 phase-change films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

Optical Properties And Static Recording Performances Of Ag-In-Te-Sb-O Films Using Short-Wavelength Laser

Optical and Recording Properties of Short Wavelength Optical Storage Materials

Optical spectral properties and short-wavelength optical storage properties of high reflection Ag5In5Te47Sb33 phase change films prepared by RF magnetron sputtering technology

Land/groove Optical Recording with GeTe/Sb2Te3 Superlattice-Like Structure

Performance of Ge–Sb–Bi–Te–B Recording Media for Phase-Change Optical Disks

Thermal And Laser-Induced Phase-Transformation In Rf-Sputtered Gesb2te4 Thin-Films