Abstract:A new type of AgInSbTe phase change thin film is prepared by direct magnetron sputtering. The temperature for crystallization obtained by differential scanning calorimetry (DSC) is 193.92°C. The undeposited AgInSbTe is amorphous by the measurement of X-ray diffraction (XRD), while the phase change film is heated at 200°C, the peak could be observed by XRD, which indicated that the amorphous state had become a crystalline state. The variation of the absorption, transmission and reflectivity of the amorphous and crystalline phase change film with the wavelength are studied. The recording performance is measured at the 650 nm laser, the influences of the recording power and recording pulse on the reflectivity contrast are analyzed. Under the same pulse, the higher the writing power is, the higher the reflectivity contrast is, and under the same writing power, the reflectivity contrast increased with pulse during increased. The results indicate the new type AgInSbTe phase change film irradiated by laser had a high reflectivity contrast, and a good recording performance could be obtained.

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