Abstract:The crystallization mechanism of In2S3-doped Sb thin films is studied in detail to verify the potential application in phase change memory. Here, we observe directly that two different crystallization behaviors can exist in In–S–Sb thin layers by using aberration-corrected scanning transmission electron microscopy. The difference between Sb53.3(In2S3)46.7 and Sb30.9(In2S3)69.1 materials is induced by phase separation. The crystallization mechanism of the Sb53.3(In2S3)46.7 material is related to the formation of the nanocomposite structure with continuous precipitation of Sb nanocrystals. The crystallization characteristic of the Sb30.9(In2S3)69.1 material originates from the diffusion-driven In–S/In–S–Sb interface formation that acts as a "n–p" heterojunction, thereby resulting in the "depletion layer effect" and decreasing the carrier density to 7.42 × 1020 cm−3 at 280 °C. Sb30.9(In2S3)69.1 shows good bipolar-type resistance switching characteristics as the conventional Ge2Sb2Te5. This work provides clear experimental evidence to deepen the understanding of the crystallization mechanism for indium chalcogenides alloyed with Sb films, contributing to the improved control of the phase change behavior to establish high-performance multi-level nonvolatile memory and neuromorphic synaptic systems.

THE OPTICAL AND ELECTRICAL-PROPERTIES OF TE-IN-SB FILMS DURING THEIR PHASE-TRANSITION

Short-wavelength phase-change optical data storage in In-Sb-Te alloy films

Optical properties of Ag8In14Sb55Te23 phase-change films

Optical and Short-wavelength Recording Properties of Ag 8 In 14 Sb 55 Te 23 Phase-change Films

Phase transition kinetics of Sb2Te3 phase change thin films

Microstructure and optical properties of Ag 5 In 5 Te 47 Sb 33 phase change thin films with high reflection in thermal annealing process

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Microstructure And Optical Properties Of Ag5in5te47sb33 Phase Change Thin Films With High Reflection In Thermal Annealing Process

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

Optical Properties and Structure of Tellurium–germanium– Bismuth–antimony Compounds with Fast Phase-Change Capability

High optical/color contrast of Sb2Te thin film and its structural origin

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Band Gap Energies and Refractive Indices of Epitaxial Pb 1- X Sr X Te Thin Films

Femtosecond Laser Pulse Induced Phase Transition of Cr-Doped Sb2te1 Films Studied with A Pump-Probe System

Optical and Short-Wavelength Recording Properties of InSbTe Phase Change Thin Films

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Optical Transition of Chalcogenide Phase-Change Thin Films

Study on Optical Constants of Laser-Induced Crystalline Ag11In12Te26Sb51 Phase-Change Media

Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method