Abstract:Ge–Sb–Te alloys are widely used for data recording based on the rapid and reversible amorphous-to-crystalline phase transformation that is accompanied by increases in the optical reflectivity and the electrical conductivity. However, uncertainties about the optical band gaps and electronic transport properties of these phases have persisted because of inappropriate interpretation of reported data and the lack of definitive analytical studies. In this paper we characterize the most widely used composition, Ge2Sb2Te5, in its amorphous, face-centered-cubic, and hexagonal phases, and explain the origins of inconsistent or unphysical results in previous reports. The optical absorption in all of these phases follows the relationship αhν∝(hν−Egopt)2, which corresponds to the optical transitions in most amorphous semiconductors as proposed by Tauc, Grigorovici, and Vancu [Tauc et al., Phys. Status Solidi 15, 627 (1966)], and to those in indirect-gap crystalline semiconductors. The optical band gaps of the amorphous, face-centered-cubic, and hexagonal phases are 0.7, 0.5, and 0.5eV, respectively. The subgap absorption in the amorphous phase shows an exponential decay with an Urbach slope of 81meV. We measured the photoconductivity of amorphous Ge2Sb2Te5 and determined a mobility-lifetime product of 3×10−9cm2∕V. The spectral photoconductivity shows a threshold at about 0.7eV, in agreement with our analysis of the optical band gap. The face-centered-cubic and hexagonal phases are highly conductive and do not show freeze-out; even at 5K the density of free carriers remains at 1019–1020cm−3, so these are degenerate semiconductors in which the Fermi level resides inside a band. In the hexagonal phase, the effect of free electrons on the Hall coefficient is significant at high temperatures. When the Hall data are fitted using the two-carrier analysis, the hole mobility is found to decrease slowly with temperature, as expected. The considerations discussed in this paper can be readily applied to study related chalcogenide materials.

Optical Transition of Chalcogenide Phase-Change Thin Films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effect of thickness and crystallization on the optical energy gap of some chalcogenide phase-change thin films

Phase Change and Optical Band Gap Behavior of Ge–Te–Ga Thin Films Prepared by Thermal Evaporation

Thermal Conductivity of Phase-Change Material Ge2Sb2Te5

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Three Distinct Optical-Switching States in Phase-Change Materials Containing Impurities: from Physical Origin to Material Design

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Understanding Aging in Chalcogenide Glass Thin Films Using Precision Resonant Cavity Refractometry

Influence of phase transformation on structure–property relationship in quaternary In10Sb10Ag10Se70 chalcogenide films

An Investigation into the Kinetics and Mechanism of Phase Transitions in Optical Phase Change Ternary Alloy $Ge_2Sb_2Te_5$

Laser-Induced Structural, Electrical And Optical Properties Evolution Of Phase Change Ge(2)Sb(2)Te(5) Thin Films

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Photoinduced Effects in Amorphous Semiconductor Ge(S, Se)(2) Chalcogenide Films

Phase Transition Kinetics of Sb(2)Te(3) Phase Change Thin Films

Phase Change-Regulated Nonlinear Optical Properties of GeSb 4 Te 7 Films Prepared by RF Magnetron Sputtering

“All-Crystalline” Phase Transition in Nonmetal Doped Germanium–antimony–tellurium Films for High-Temperature Non-Volatile Photonic Applications

Solution-derived Ge-Sb-Se-Te phase-change chalcogenide films