Abstract:Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

Direct observation of structural transitions in the phase change material Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Structural Phase Transition of Multilayer VSe2.

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Investigation Of Phase Transitions In Stacked Gete/Snte And Ge2se3/Snte Chalcogenide Films

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Unifying local and average structure in the phase change material GeTe

Investigations on phase change characteristics of Ti-doped Ge2Sb2Te5 system

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

Topologically Nontrivial Phase-Change Compound GeSb2Te4

Optical Transition of Chalcogenide Phase-Change Thin Films

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

A Body-Centered-Cubic Polymorph of the Ge2sb2te5 Phase Change Alloy

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6