Dynamic Threshold Switching Behavior of Ge[sub 2]sb[sub 2]te[sub 5] and Sb-doped Ge[sub 2]sb[sub 2]te[sub 5] Thin Films Using Scanning Electrical Nanoprobe

P. Zhou,Y. C. Shin,B. J. Choi,S. Choi,C. S. Hwang,Y. Y. Lin,H. B. Lv,X. J. Yan,T. A. Tang,L. Y. Chen,B. M. Chen
DOI: https://doi.org/10.1149/1.2754390
2007-01-01
Electrochemical and Solid-State Letters
Abstract:The dynamic oscillation in the current-time characteristics of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2Sb2Te5 and doped Ge2Sb2Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2Sb2Te5 during postannealing at 300 degrees C. Sb-doping also increased the threshold switching speed. (c) 2007 The Electrochemical Society.
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