Abstract:Ternary alloys of Ge-Sb-Te (GST) have been extensively studied due to their unique ability display a reversible change in their phase upon stimulation by optical pulses i.e., amorphous (a-GST) to crystalline (c-GST) and vice-versa. The two phases exhibit remarkably different electrical and optical properties like conductivity, reflectivity, refractive index and optical loss, this coupled with their high phase switching speeds, low power phase switching, large measurable optical and electrical contrast, and phase stability makes GST alloys stand out from other phase change materials (PCM). GST alloys have already found extensive use in optical disks and electronic memories due to their non-volatility and zero static power consumption, but the precise mechanism of the phase change is not clearly understood. The phase change mechanism has usually been attributed to the optical pulse, usually a high power short pulse laser, heating up the c-GST alloy to above its melting temperature (Tm) after which, if it is cooled rapidly enough to below the glass transition temperature (Tg), the atoms are fixed in place due to the drastic reduction in their mobility, resulting in a phase which exhibits structure similar to a frozen liquid and lacks long range order i.e. amorphous. When heated above Tg with an intermediate power laser pulse for a significant amount of time, then this favors the shift back to the energetically favorable crystalline phase. With the growing interest in next generation data storage technology for photonic and neuromorphic computing, the research into understanding and improving the properties of GST alloys has also been rekindled. In this term paper we hope to investigate and gain a deeper understanding and appreciation of the kinetics and underlying atomistic mechanism of this phase transition from c-GST to a-GST and vice-versa which is only now becoming clearer.

Role of Ge Switch in Phase Transition: Approach Using Atomically Controlled Gete/Sb2te3 Superlattice

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

An Investigation into the Kinetics and Mechanism of Phase Transitions in Optical Phase Change Ternary Alloy $Ge_2Sb_2Te_5$

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

In‐Plane Twinning Defects in Hexagonal GeSb 2 Te 4

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Understanding the role of GeSbTe layer on atomic switch through current sweep mode measurement for enhanced threshold switching device

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics