Abstract:Phase-change materials are of great interest for low-power high-throughput storage devices in next-generation neuromorphic computing technologies. Their operation is based on the contrasting properties of their amorphous and crystalline phases, which can be switched on the nanosecond time scale. Among the archetypal phase change materials based on Ge-Sb-Te alloys, Sb2Te3 displays a fast and energy-efficient crystallization-amorphization cycle due to its growth-dominated crystallization and low melting point. This growth-dominated crystallization contrasts with the nucleation-dominated crystallization of Ge2Sb2Te5. Here, we show that the energy required for and the time associated with the amorphization process can be further reduced by using a photoexcitation-based nonthermal path. We employ nonadiabatic quantum molecular dynamics simulations to investigate the time evolution of Sb2Te3 with 2.6, 5.2, 7.5, 10.3, and 12.5% photoexcited valence electron-hole carriers. Results reveal that the degree of amorphization increases with excitation, saturating at 10.3% excitation. The rapid amorphization originates from an instantaneous charge transfer from Te-p orbitals to Sb-p orbitals upon photoexcitation. Subsequent evolution of the excited state, within the picosecond time scale, indicates an Sb-Te bonding to antibonding transition. Concurrently, Sb-Sb and Te-Te antibonding decreases, leading to formation of wrong bonds. For photoexcitation of 7.5% valence electrons or larger, the electronic changes destabilize the crystal structure, leading to large atomic diffusion and irreversible loss of long-range order. These results highlight an ultrafast energy-efficient amorphization pathway that could be used to enhance the performance of phase change material-based optoelectronic devices.

Femtosecond Laser Pulse Induced Phase Transition of Cr-Doped Sb2te1 Films Studied with A Pump-Probe System

Femtosecond Laser-induced Crystallization of Amorphous Sb2Te3 film and Coherent Phonon Spectroscopy Characterization and Optical Injection of Electron Spins

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Optical–electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Phase transition kinetics of Sb2Te3 phase change thin films

Ultrafast Phase Transitions in Ge 1 Sb 2 Te 4 Films Induced by Femtosecond Laser Beam

Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Switching to Hidden Metallic Crystal Phase in Phase-Change Materials by Photoenhanced Metavalent Bonding

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

THE OPTICAL AND ELECTRICAL-PROPERTIES OF TE-IN-SB FILMS DURING THEIR PHASE-TRANSITION

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy