Abstract:Phase-change materials are of great interest for low-power high-throughput storage devices in next-generation neuromorphic computing technologies. Their operation is based on the contrasting properties of their amorphous and crystalline phases, which can be switched on the nanosecond time scale. Among the archetypal phase change materials based on Ge-Sb-Te alloys, Sb2Te3 displays a fast and energy-efficient crystallization-amorphization cycle due to its growth-dominated crystallization and low melting point. This growth-dominated crystallization contrasts with the nucleation-dominated crystallization of Ge2Sb2Te5. Here, we show that the energy required for and the time associated with the amorphization process can be further reduced by using a photoexcitation-based nonthermal path. We employ nonadiabatic quantum molecular dynamics simulations to investigate the time evolution of Sb2Te3 with 2.6, 5.2, 7.5, 10.3, and 12.5% photoexcited valence electron-hole carriers. Results reveal that the degree of amorphization increases with excitation, saturating at 10.3% excitation. The rapid amorphization originates from an instantaneous charge transfer from Te-p orbitals to Sb-p orbitals upon photoexcitation. Subsequent evolution of the excited state, within the picosecond time scale, indicates an Sb-Te bonding to antibonding transition. Concurrently, Sb-Sb and Te-Te antibonding decreases, leading to formation of wrong bonds. For photoexcitation of 7.5% valence electrons or larger, the electronic changes destabilize the crystal structure, leading to large atomic diffusion and irreversible loss of long-range order. These results highlight an ultrafast energy-efficient amorphization pathway that could be used to enhance the performance of phase change material-based optoelectronic devices.

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Optical Excitation-Induced Ultrafast Amorphization in the Y-Sb-Te Alloy System: Insights from Real-Time Time-Dependent DFT with Molecular Dynamics Calculations

Time-dependent Density-Functional Theory Molecular-Dynamics Study on Amorphization of Sc-Sb-Te Alloy under Optical Excitation

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

Switching to Hidden Metallic Crystal Phase in Phase-Change Materials by Photoenhanced Metavalent Bonding

Role Of Electronic Excitation In The Amorphization Of Ge-Sb-Te Alloys

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Phase-change Behaviors of Sb80Te20/SbSe Nanocomposite Multilayer Films

Multiscale Simulations of Growth-Dominated Sb2Te Phase-Change Material for Non-Volatile Photonic Applications

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

Direct observation of metastable face-centered cubic Sb 2 Te 3 crystal

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb 2 Te 3 -GeTe superlattices

Electronic Excitation Induced Solid-State Amorphization in Ge-Sb-Te Alloy

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films