Abstract:Phase-change materials are of great interest for low-power high-throughput storage devices in next-generation neuromorphic computing technologies. Their operation is based on the contrasting properties of their amorphous and crystalline phases, which can be switched on the nanosecond time scale. Among the archetypal phase change materials based on Ge-Sb-Te alloys, Sb2Te3 displays a fast and energy-efficient crystallization-amorphization cycle due to its growth-dominated crystallization and low melting point. This growth-dominated crystallization contrasts with the nucleation-dominated crystallization of Ge2Sb2Te5. Here, we show that the energy required for and the time associated with the amorphization process can be further reduced by using a photoexcitation-based nonthermal path. We employ nonadiabatic quantum molecular dynamics simulations to investigate the time evolution of Sb2Te3 with 2.6, 5.2, 7.5, 10.3, and 12.5% photoexcited valence electron-hole carriers. Results reveal that the degree of amorphization increases with excitation, saturating at 10.3% excitation. The rapid amorphization originates from an instantaneous charge transfer from Te-p orbitals to Sb-p orbitals upon photoexcitation. Subsequent evolution of the excited state, within the picosecond time scale, indicates an Sb-Te bonding to antibonding transition. Concurrently, Sb-Sb and Te-Te antibonding decreases, leading to formation of wrong bonds. For photoexcitation of 7.5% valence electrons or larger, the electronic changes destabilize the crystal structure, leading to large atomic diffusion and irreversible loss of long-range order. These results highlight an ultrafast energy-efficient amorphization pathway that could be used to enhance the performance of phase change material-based optoelectronic devices.

Role Of Electronic Excitation In The Amorphization Of Ge-Sb-Te Alloys

Electronic Excitation Induced Solid-State Amorphization in Ge-Sb-Te Alloy

Optical Excitation-Induced Ultrafast Amorphization in the Y-Sb-Te Alloy System: Insights from Real-Time Time-Dependent DFT with Molecular Dynamics Calculations

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Time-dependent Density-Functional Theory Molecular-Dynamics Study on Amorphization of Sc-Sb-Te Alloy under Optical Excitation

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

The local structural differences in amorphous Ge-Sb-Te alloys

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Dislocation-Templated Amorphization of Ge2sb2te5 Nanowires under Electric Pulses: A Theoretical Model

Electron Excitation Induced Structural Amorphization in Sb 2 Se 3 : an Ab Initio Molecular Dynamics Study

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

DYNAMICS OF AMORPHIZATION INDUCED IN CRYSTALLINE Ge1Sb2Te4 FILMS BY SINGLE FEMTOSECOND PULSES

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Orchestrating phase transition in GeTe thermoelectrics: An investigation into the role of electronegativity

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Origin of Short- and Medium-Range Order in Supercooled Liquid Ge3Sb2Te6 Using Ab Initio Molecular Dynamics Simulations.