Abstract:Phase change recording is an emerging technology for achieving removable high density data storage compatible with CD or DVD ROM. The data transfer rate (DTR) is one of the most important parameters for PC optical recording disks. DTR is primarily limited by the crystallization speed of the amorphous marks in the recording layer. The amorphous marks cannot be completely erased when the crystallization speed is not fast enough to match the linear velocity of the laser light spot with respect to the disk. This would cause distortions in the shape of the overwritten marks, and results in a high level of noise. Therefore the re-crystallization behavior of the phase change layer is fundamental to phase change recording technology. AgInSbTe and GeSbTe are two main phase change materials used in current phase change optical disks. The complete erasing time (CET) of the former one increases strongly with an increase of the size of the written mark, and therefore is called a growth-driven material. The CET of the latter increases only slightly with the increase of the size of the written mark, and therefore is called a nucleation-driven material. In order to achieve high DTR, we must study the dynamic erasing behavior of phase change optical disks. This article addresses how marks are erased in rewritable phase change optical disks.

Land/groove Optical Recording with GeTe/Sb2Te3 Superlattice-Like Structure

Superlattice-Like Structure for High Recording Speed Phase Change Optical Discs

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Superlattice-Like Structure For Phase Change Optical Recording

Superlattice-like Phase Change Optical Disk for Multispeed Recording

Superlattice-like phase-change optical recording disks

Performances Of Phase-Change Recording Disks Based On Gasbte Media

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Blu-ray Type Super-Resolution Near-Field Phase Change Disk with In2Ge8Sb85Te5 Mask Layer

Performance of Ge–Sb–Bi–Te–B Recording Media for Phase-Change Optical Disks

Super-Resolution Near-Field Disk with Phase-Change Sn-Doped Gesbte Mask Layer

Ultra-high-density Phase-Change Storage Using AlNiGd Metallic Glass Thin Film As Recording Layer

A New Structure of Super-Resolution Near-Field Phase-Change Optical Disk with a Sb2Te3 Mask Layer

Study of the Dynamic Crystallization Behavior of GeSbTe Phase Change Optical Disk

A New Structure of Super-Resolution Near-Field Phase-Change Optical Disk with a Sb<sub>2</sub>Te<sub>3</sub>Mask Layer

Dynamic crystallization behavior of phase change optical recording in erasing process

Study of the Partial Crystallization Properties of Phase-Change Optical Recording Disks

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Investigation on Super-Resolution Near-Field Blu-Ray-Type Phase-Change Optical Disk with Sb<sub>2</sub>Te<sub>3</sub> Mask Layer

Super-Resolution Near-Field Phase Change Disk with Sb70Te30 Mask Layer

Preparation And Short-Wavelength Optical Storage Properties Of Ge-Te Alloy Phase Change Thin Film