Abstract:Phase change recording is an emerging technology for achieving removable high density data storage compatible with CD or DVD ROM. The data transfer rate (DTR) is one of the most important parameters for PC optical recording disks. DTR is primarily limited by the crystallization speed of the amorphous marks in the recording layer. The amorphous marks cannot be completely erased when the crystallization speed is not fast enough to match the linear velocity of the laser light spot with respect to the disk. This would cause distortions in the shape of the overwritten marks, and results in a high level of noise. Therefore the re-crystallization behavior of the phase change layer is fundamental to phase change recording technology. AgInSbTe and GeSbTe are two main phase change materials used in current phase change optical disks. The complete erasing time (CET) of the former one increases strongly with an increase of the size of the written mark, and therefore is called a growth-driven material. The CET of the latter increases only slightly with the increase of the size of the written mark, and therefore is called a nucleation-driven material. In order to achieve high DTR, we must study the dynamic erasing behavior of phase change optical disks. This article addresses how marks are erased in rewritable phase change optical disks.

Study of the Dynamic Crystallization Behavior of GeSbTe Phase Change Optical Disk

Dynamic crystallization behavior of phase change optical recording in erasing process

Study of the Partial Crystallization Properties of Phase-Change Optical Recording Disks

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Performances Of Phase-Change Recording Disks Based On Gasbte Media

Properties and Reactive Sputtering Parameters of GeN Film for High-Density Phase-Change Optical Disk

Superlattice-Like Structure For Phase Change Optical Recording

Performance of Ge–Sb–Bi–Te–B Recording Media for Phase-Change Optical Disks

Thermodynamic Parameters, Microstructures and Optical Properties of Sb-Se-Based and Ge-Sb-Te-Based Phase Change Optical Disc Recording Media

Optical Constants of Laser-Induced Crystalline Ge2Sb2Te5 Phase-Change Media

Superlattice-Like Structure for High Recording Speed Phase Change Optical Discs

Crystallization of Ge-doped AgInTeSb phase-change optical disk media

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Land/groove Optical Recording with GeTe/Sb2Te3 Superlattice-Like Structure

Super-Resolution Near-Field Phase Change Disk with Sb70Te30 Mask Layer

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Structural and electronic characteristics of amorphous Ge8Sb2Te11

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Direct observation of structural transitions in the phase change material Ge2Sb2Te5