Abstract:Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

Dynamic crystallization behavior of phase change optical recording in erasing process

Study of the Dynamic Crystallization Behavior of GeSbTe Phase Change Optical Disk

Study of the Partial Crystallization Properties of Phase-Change Optical Recording Disks

Superlattice-Like Structure For Phase Change Optical Recording

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Study of the Multi-Level Reflection Modulation Recording for Phase Change Optical Disks

Performances Of Phase-Change Recording Disks Based On Gasbte Media

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Simulation and Characteristics of Phase Change Optical Disk

Properties and Reactive Sputtering Parameters of GeN Film for High-Density Phase-Change Optical Disk

Initialization-free Multi-speed Phase-change Optical Disk

Superlattice-like Phase Change Optical Disk for Multispeed Recording

Substrate Deformation Studies on Direct-Overwriting (DOW) of Phase-Change Rewritable Optical Disc

Superlattice-Like Structure for High Recording Speed Phase Change Optical Discs

Nanophase Change for Data Storage Applications

Land/groove Optical Recording with GeTe/Sb2Te3 Superlattice-Like Structure

Thermodynamic Parameters, Microstructures and Optical Properties of Sb-Se-Based and Ge-Sb-Te-Based Phase Change Optical Disc Recording Media

Ultra-high-density Phase-Change Storage Using AlNiGd Metallic Glass Thin Film As Recording Layer

Initialization-free Dual-Layer Phase-Change Optical Disk

Performance of Ge–Sb–Bi–Te–B Recording Media for Phase-Change Optical Disks

New Structure of Dual-Layer Rewritable Phase-Change Optical Disc