Abstract:Mechanical properties of as-deposited GeSbTe media on SiO2/Si(100) with different compositions and film thicknesses were successfully investigated by using the microcantilever method and nanoindentation. All the studied films show a compressive residual stress state, which increases proportionally to the elastic constant. Because of the accumulating effects during film deposition, the mechanical properties of these GeSbTe films can be greatly affected. As the film thicknesses were 20 and 25 nm, compared with the Ge4SbTe5 and Ge4Sb0.5Te5Bi0.5 films, the Ge2Sb2Te5 film has the highest residual stress value ranging from 3 MPa to 15 MPa. When the film thickness was 30 nm, the composition-induced stress relaxation occurred. Bi addition, which leads to lattice expansion in Ge4SbTe5 films, resulted in a decrease of stress. Compared with the Ge4SbTe5 and Ge4Sb0.5Te5Bi0.5 films, the Ge2Sb2Te5 film also has the lowest coefficient of thermal expansion (CTE) value ranging from 2 x 10(-6) to 7 x 10(-6)/degreesC, and a lower CTE was obtained when the film thickness was increased. By nanoindentation, the Ge4SbTe5 film shows higher hardness and elastic constant than those of the Ge2Sb2Te5 film. The measured hardnesses for Ge2Sb2Te5 and Ge4SbTe5 films are 12 GPa and 18 GPa; and the reduced elastic modului are 120 GPa and 140 GPa, respectively.

Performances Of Phase-Change Recording Disks Based On Gasbte Media

Performance of Ge–Sb–Bi–Te–B Recording Media for Phase-Change Optical Disks

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Study of the Dynamic Crystallization Behavior of GeSbTe Phase Change Optical Disk

Thermodynamic Parameters, Microstructures and Optical Properties of Sb-Se-Based and Ge-Sb-Te-Based Phase Change Optical Disc Recording Media

Study of the Partial Crystallization Properties of Phase-Change Optical Recording Disks

Land/groove Optical Recording with GeTe/Sb2Te3 Superlattice-Like Structure

Superlattice-Like Structure for High Recording Speed Phase Change Optical Discs

Superlattice-Like Structure For Phase Change Optical Recording

Dynamic crystallization behavior of phase change optical recording in erasing process

Properties and Reactive Sputtering Parameters of GeN Film for High-Density Phase-Change Optical Disk

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Superlattice-like Phase Change Optical Disk for Multispeed Recording

New Optical Media Based on Ge4Sb1-xBixTe5

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Optical Properties of Ge40Sb10Te50Bx (x = 0–2) Films

Mechanical Properties of Phase-change Recording Media: GeSbTe Films

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

Testing of dynamic recording properties for TeOx and Ag-In-Sb-Te-O thin films

Super-Resolution Near-Field Phase Change Disk with Sb70Te30 Mask Layer