Super-Resolution Near-Field Disk with Phase-Change Sn-Doped Gesbte Mask Layer

Mei Ling Lee,Kok Thong Yong,Chee Lip Gan,Lee Hou Ting,Lu Ping Shi
DOI: https://doi.org/10.1143/jjap.48.03a063
IF: 1.5
2009-01-01
Japanese Journal of Applied Physics
Abstract:A new mask layer of Sn-doped (7 at. %) Ge(2)Sb(2)Te(5) was developed and used on super-resolution near-field phase-change optical disks (super-RENS). Temperature-dependent reflectivity result showed a reflectivity change at 169 degrees C with Sn doping into Ge(2)Sb(2)Te(5). The mask material also showed high thermal stability. Optical study indicated the suitability of the film for use in blue-laser recording and as a mask layer. Fast crystallization within 90 ns was achieved using a pulsed high-power laser beam of 405 nm wavelength. Dynamic recording performance of the new structure showed carrier-to-noise ratios (CNR) of 37 and 18 dB obtained for 80 and 50 nm mark sizes, respectively. Readout thermal stability of 12,000 cycles was realized for 80 nm mark sizes. The incorporation of Sn-doped GeSbTe (GST) as mask layer in the super-RENS structure significantly improved the CNR and thermal stability of the disk. (C) 2009 The Japan Society of Applied Physics
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