Abstract:Random Ag-SiN films consisting of random small Ag particles embedded in a SiN thin film were deposited by radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam. It showed that, with a random Ag-SiN layer deposited above the recording layer, the ablation of the recording layer Occurred much faster and under much lower power than that of a single recording layer, which verified the local field enhancement of multiple scattering effects of the Ag particles. Finite Difference Time Domain (FDTD) calculation of a sandwiched structure consisting of ZnS-SiO2(130nm)/AgOx(20nm)/ZnS-SiO2(40nm) under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the structure. Near-field optical data storage adopting a Super-Resolution Near-field Structure (Super-RENS) usually utilizes similar films structure mentioned above to achieve super resolution storage density while that small Ag particles getting a high Carrier to Noise Ratio (CNR) at the same time. Many recent works have reported ,were formed in the AgOx film after converging laser irradiation onto the sandwiched structure. Here, another FDTD calculation was clone to simulate the same model except for that small Ag particles were modeled in the AgOx film in the center region of the incident laser spot. The results showed a huge local near-field enhancement, which indicates that, if the structure full of such small Ag particles are formed in a tiny region beyond the optical diffraction limit, the optical recording and readout out density would be improved as well as a high CNR level achieved due to the multiple scattering of the Ag particles.

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