Abstract:Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge2Sb2Te5 thin films induced via employing a nanosecond multi-pulse laser with different energy and pulse duration were performed by Raman spectroscopy, reflection measurement and thermal simulations. Upon laser-crystallized Ge2Sb2Te5 films, optical functions change drastically, leading to distinguishable reflectivity contrasts of intermediate states between amorphous and crystalline phases due to different crystallinity. The changes in optical intensity for laser-crystallized Ge2Sb2Te5 are also accompanied by micro-structure evolution, since high-energy and longer pulses result in higher-level intermediate states (corresponding to high reflection intensity) and largely contribute to the formation of stronger Raman peaks. By employing thermal analysis, we further demonstrated that the variations of both laser fluence and pulse duration play decisive roles in the degree of crystallinity of Ge2Sb2Te5 films. Laser fluence is mainly responsible for the variations in crystallization temperature, while the varying pulse duration has a great impact on the crystallization time. The present study offers a deeper understanding of the crystallization characteristic of phase change material Ge2Sb2Te5.

Influence of laser energy on the crystallization of Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin film prepared by pulsed laser deposition

Influence of laser energy on the crystallization of Ge 2Sb 2Te 5 thin film prepared by pulsed laser deposition

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

A Study on the Crystallization Behavior of Sn-doped Amorphous Ge2Sb2Te5 by Ultraviolet Laser Radiation

Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Optical Constants of Laser-Induced Crystalline Ge2Sb2Te5 Phase-Change Media

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films