Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials

Phase Change Behaviors Of Sn-Doped Ge-Sb-Te Material

Crystallization and thermal stability of Sn-doped Ge2Sb2Te5 phase change material

Crystallization and Thermal Stability of Sn-doped Ge2Sb2Te5phase Change Material

A Study on the Crystallization Behavior of Sn-doped Amorphous Ge2Sb2Te5 by Ultraviolet Laser Radiation

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Phase Change Behaviors of In-Ge-Sb-Te Alloy

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Crystallization Kinetics of Ga–Sb–Te Films for Phase Change Memory

Characteristics of Si-Sb-Te Films for Phase Change Memory

Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Phase Transition Kinetics of Sb(2)Te(3) Phase Change Thin Films

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

Femtosecond Laser Pulse Induced Phase Transition of Cr-Doped Sb2te1 Films Studied with A Pump-Probe System