Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

Phase Change Behaviors Of Sn-Doped Ge-Sb-Te Material

Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials

Crystallization and thermal stability of Sn-doped Ge2Sb2Te5 phase change material

Crystallization and Thermal Stability of Sn-doped Ge2Sb2Te5phase Change Material

Phase Change Behaviors of In-Ge-Sb-Te Alloy

A Study on the Crystallization Behavior of Sn-doped Amorphous Ge2Sb2Te5 by Ultraviolet Laser Radiation

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Magnetic Properties and Phase Change Features in Fe-doped Ge-Sb-Te.

[O47] Phase equilibria of thermoelectric materials: Ag-Sb-Te and AgSbTe2-AgSbSe2

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Direct observation of structural transitions in the phase change material Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$