Abstract:Recently, we have carried out a detailed Raman analysis to investigate the inhomogeneous crystallization of a-Si thin films irradiated by femtosecond (Fs) laser. As expected, there are many etched spots overlapping each other, which features the surface morphology of the irradiated films. It is observed clearly that there has generated an inhomogeneous crystallization inside a-Si thin film induced by Fs laser, and the crystalline volume fraction in one irradiated spot varies depending on different areas from the center to the edge. It is hard to observe any crystallization at the spot center where maximum energy of Fs laser is injected; however, there is an increasing crystalline volume fraction when the site varies from the center to the edge of the irradiated spot. More importantly, as the site varies from the center to the edge, the TO mode of Si nanocrystals (NCs; first-order Si-Si peak at similar to 520.5 cm(-1)) is asymmetrically broadened towards the low wavenumber and exhibits a dip on the high wavenumber. A model has been proposed to explain this inhomogeneous crystallization inside the a-Si thin films induced by Fs laser, and both phonon confinement model and Fano model have been employed to discuss the origin of asymmetric line shapes of TO mode of Si NCs, and we prefer to attribute the asymmetry of TO mode to Fano effect. Our present research results provide a deep insight into the origin of asymmetric broadening for the Raman TO mode of Si NCs inside a-Si thin films irradiated by Fs laser.

The Study of the Microstructures in Ar+ Laser Crystallized Asi:H Films for Active Layer of TFT

Ar+ laser crystallization of a-Si:H film for active layer of TFT

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

Analysis of the microstructure of laser crystallized hydrogenated amorphous silicon films by spectroscopic ellipsometry

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

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AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

KrF Laser-Induced Nanometer Si Crystallites Formation and Tem Observation

Inhomogeneous Crystallization of A-Si Thin Films Irradiated by Femtosecond Laser

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Microstructure of Laser Surface Melting (LSM) Layers on Cast Al-Si Alloy

The effect of post-treatments on crystallization in a-Si:H/a-SiNx:H multilayers

Structure and Optical Properties of A-C:H/a-sio X :H Multilayer Thin Films

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers