Abstract:By ablating a ceramic SiC target with pulsed ArF excimer laser, SiC films were prepared on Si (100) substrate. After annealing in vacuum (10 -3 Pa) at different temperatures, the films were examined with FTIR, XRD, TEM, XPS and PL spectroscopy to investigate the optimal temperature of crystallization, surface morphology, crystal structure and composition. The films deposited on Si(100) substrates at 800°C are all composed of amorphous SiC. The nucleation-growth transformation occurs in SiC films annealed in vacuum at a temperature between 850°C and 1050°C. The films are crystallized optimally at 980°C. The transformation from 3C-SiC to 6H-SiC and/or the growth and annihilation of 3C-SiC may occur in the films with the increase of the annealing temperature (6H-SiC and/or 3C-SiC exist in the film annealed at the optimal temperature). Excited by 370 nm light at room temperature, the film shows a strong emission peak at 447 nm. The emission may be assigned to the recombined radiative transition between the valence band and the shallow donor levels induced by the vacancies and other crystal defects.

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Radiative Transition with Visible Light in Crystallized Age:H/asinx:h Multiquantum-Well Structures

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Laser crystallization technique for preparation of visible luminescent silicon quantum-well

Observation of the Size-Dependent Blueshifted Electroluminescence from Nanocrystalline Si Fabricated by Krf Excimer Laser Annealing of Hydrogenated Amorphous Silicon Amorphous-Sinx : H Superlattices

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

A New Way of Fabricating Luminescent Silicon Crystallites by Excimer Laser Annealing of A-Si:H

Visible Light Emission from Crystallized Hydrogenated Amorphous Germanium/silicon Nitride Multiquantum-Well Structures