Abstract:Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. We note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between different densities of amorphous samples. For any reasonable deformation rate, we observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in denser structures relative to crystalline Si. We conclude that although there is substantial agreement between experimental measurements and most simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally we show that annealing simulations of our amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in amorphous silicon are analogous to those in crystalline silicon.

Activated mechanisms in amorphous silicon: an activation-relaxation-technique study

Energy landscape of relaxed amorphous silicon

Structural dynamics of a model of amorphous silicon

Structural Relaxation Kinetics for First and Second-Order Processes: Application to Pure Amorphous Silicon

Thermal Activation of the Crystallization Kinetics of Amorphous Silicon

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon

Atomistic Simulations of Elastic and Plastic Properties in Amorphous Silicon

Medium-range Order in Amorphous Silicon Investigated by Constrained Structural Relaxation of Two-Body and Four-Body Electron Diffraction Data

Topology of amorphous tetrahedral semiconductors on intermediate lengthscales

Experimentally Constrained Molecular Relaxation: The case of hydrogenated amorphous silicon

Self Diffusion in Silicon Using the Ackland Potential

Structural tunability and origin of two-level systems in amorphous silicon

Metastability of Amorphous Silicon from Silicon Network Rebonding

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Atomistic simulations of structural relaxation process in amorphous silicon carbide

Direct simulation of ion beam induced stressing and amorphization of silicon

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Microscopic mechanisms of pressure-induced amorphous-amorphous transitions and crystallisation in silicon

A microscopic description of light induced defects in amorphous silicon solar cells

Understanding defects in amorphous silicon with million-atom simulations and machine learning