Abstract:In this work we focus on the simulation of radiation effects on silicon under proton irradiation at different scales. Two models of the Monte Carlo displacement damage calculation method in the Particle and Heavy Ion Transport code System (PHITS) were first used: the Torrens displacements per atom (NRT-DPA) model and a thermal recombination corrected dpa (arc-DPA), the prediction result of the final arc-DPA model is about 1/3 lower than the traditional NRT-DPA model; we also compared the difference between the two calculated values at the same dose of irradiation. When presenting a molecular dynamics study of the generation and evolution of silicon defects under irradiation, we simulated a 10 keV displacement cascade at room temperature. By post-processing the simulation results, the changes in the distribution and number of defects, as well as the evolution of defect clusters, were analyzed, where both the number of point defects and vacancy clusters show a tendency to increase and then decrease. Finally, first-principles were used to simulate and analyze the energy band structures , DOS, effective mass, the dielectric function, reflection and transmission spectra of silicon after introduction of defects. In order to obtain more accurate value of the bandgap, the HSE06 hybridization generalization is used so that the bandgap is not underestimated, while the clear bandgap facilitates fine analysis of the band structures of the defect states. We found that although the width of the energy band is reduced, which will lead to a increase of intrinsic carrier concentration. At the same time, the effective mass of the electron and hole are greatly reduced, which ultimately leads to a reduction of carrier mobility, and this will finally cause series of performance degradations.

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Study of irradiation damage in silicon at different scales

Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope

A study on the thermal conductivity of proton irradiated CVD-SiC and sintered SiC, measured using a modified laser flash method with multi-step machining

Damage Effects of Au&He Dual Ion Irradiated Silicon Carbide

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Effect of Very High-Fluence Proton Radiation on 6H-Sic Photoconductive Proton Detectors

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models