Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Effect of Very High-Fluence Proton Radiation on 6H-Sic Photoconductive Proton Detectors

Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Proton Irradiation Damage and Annealing Effects in ON Semiconductor J-Series Silicon Photomultipliers

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Effects of Proton Irradiation on a CMOS Image Sensor

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Development of a silicon carbide radiation detection system and experimentation of the system performance

Effect of proton radiation on 8T CMOS image sensors for space applications

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Proton Radiation Effects on High-Speed Silicon Mach-Zehnder Modulators for Space Application

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

A beam-driven proton irradiation setup for precision radiation damage tests of silicon detectors