Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Peak Response Wavelength Tunable 4H-Sic UV Detector Covering Near-Ultraviolet Region with High-Temperature Stability and Radiation Hardness

Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

4H-Sic Δn-I-p Extreme Ultraviolet Detector with Gradient Doping-Induced Surface Junction

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

Charge Collection Performance of 4H-SiC LGAD

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Electrical and Spectroscopic Properties of SiC Detectors

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices