Abstract:The built-in electric field associated with a junction, e.g., p–n conjunction, can drive the separation and transport of photogenerated carriers to make self-driven photodetectors, but its strength is limited, and thus, the device performance requires further improvement. Herein, we propose to enhance the driving strength by constructive superposition of the built-in electric fields associated with two or more junctions and designed a p–n junction and n–n heterojunction-coupled photodetector involving three prevalent wide-bandgap semiconductors, namely, p-GaN, n-Ga2O3:Sn, and n-ZnO. This new n-ZnO/n-Ga2O3:Sn/p-GaN dual-junction-based photodetector turned out to be much more sensitive for ultraviolet (UV) light detection over the sole p–n junction n-Ga2O3:Sn/p-GaN-based device. It delivered the highest light-to-dark current ratio, I light/I dark, of ∼3.2 × 104, responsivity, R, of 178.24 mA/W, and detectivity, D*, of 1.25 × 1013 Jones toward 260 nm UV light without an external bias voltage, which are significantly higher than those of the sole p–n junction device (I light/I dark = 1.8 × 104, R = 142.73 mA/W, and D* = 8.45 × 1012 Jones) and are among the best figures reported so far for the self-driven Ga2O3-based photodetectors. When reversely biased at −0.5 V, the dual-junction device exhibited an even higher R value of 351.46 mA/W and D* value of 8.71 × 1011 Jones toward 255 nm UV light. This ultrasensitive dual-junction n-ZnO/n-Ga2O3:Sn/p-GaN-based photodetector, operable in both self-driven and reverse-biased modes, holds great application potential for UV detection in a broad range (240–400 nm). More interestingly, our strategy of enhancing the separation and transport of photogenerated carriers by exploiting the constructive superposition effect of the built-in electric fields in multiple junctions may be generally extended to develop high-performance optoelectronic devices where the built-in electric field plays a key role.

4H-Sic Δn-I-p Extreme Ultraviolet Detector with Gradient Doping-Induced Surface Junction

High-Performance 4H-SiC Schottky Photodiode With Semitransparent Grid-Electrode for EUV Detection

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Numerical and Analytical Study of 6H-Sic Detectors with High UV Performance

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area.

High-performance ultraviolet photodetector based on p-PEDOT:PSS film/p-ZnO:Sb microwire/n-Si double heterojunction

High-performance deep-ultraviolet photodetector based on a single-crystalline ε-Ga2O3/Sn-doped In2O3 heterojunction

Highly Sensitive Photodetector Based on the N-Si/p-gase Vertical Heterojunction

Study on SiC UV/EUV Coaxial Photodetector

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

An Ultrafast Wse2 Photodiode Based On A Lateral P-I-N Homojunction

Ultrasensitive Dual-Junction-Coupled n-ZnO/n-Ga 2 O 3 /p-GaN-Based Self-Driven Broad-Band Ultraviolet Photodetector

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

High-responsivity self-powered deep-ultraviolet photodetector based on n-SnS 2 /p-GaN heterostructures