Abstract:Silicon carbide (SiC) semiconductors with a wide bandgap have attracted much attention because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect ultraviolet (UV) light without the ability to discriminate wavelength. Here, using the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device's external quantum efficiency spectrum, inducing a full width at half-maximum of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the device has a photo-to-dark current ratio as high as 4 x 10(7), superior to the performance of most reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW cm(-2), more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperatures of 350 degrees C, demonstrating bright prospects in harsh industrial conditions.

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area.

High-Performance 4H-SiC Schottky Photodiode With Semitransparent Grid-Electrode for EUV Detection

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

4H-Sic Δn-I-p Extreme Ultraviolet Detector with Gradient Doping-Induced Surface Junction

Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

Study on SiC UV/EUV Coaxial Photodetector

4H-Sic Visible Blind UV Avalanche Photodiode

Numerical and Analytical Study of 6H-Sic Detectors with High UV Performance

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Demonstration of the First 4H-Sic Avalanche Photodiodes

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

Performance of Thin 4H-Sic UV Avalanche Photodiodes

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

Peak Response Wavelength Tunable 4H-Sic UV Detector Covering Near-Ultraviolet Region with High-Temperature Stability and Radiation Hardness

4H-Sic Tetra-Lateral Position Sensitive Detector for Ultraviolet Measurements

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer