Abstract:The large bandgap of 4H-SiC (3.25 eV) makes it a suitable material for visible-blind UV detection. In the paper, the performance of 4H-SiC avalanche photodiodes (APDs) with a thin avalanche width of 0.1 mum is evaluated. Avalanche photodiodes with thin multiplication regions can greatly improve the signal-to-noise ratio of photoreceiver systems by providing internal gain while maintaining a high operating speed and low operating voltage. The diodes exhibit a peak unity-gain responsivity of 144 mA/W at a wavelength of 265 nm. Photomultiplication measurements carried out on these diodes showed that beta > a in 4H-SiC, where beta and alpha are the hole and electron ionisation coefficients, respectively. The 4H-SiC APDs also exhibit very low excess noise corresponding to k = 0. 1 (where k = alpha/beta for hole multiplication) in the local model when illuminated by 325 nm light. This is much lower than that of commonly used Si APDs with identical thickness and indicates that 4H-SiC is well suited for high gain, low noise UV detection. In view of the large beta/alpha ratio measured in these thin 4H-SiC APDs, multiplication must be initiated by hole injection to ensure a low excess-noise performance.

Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

Demonstration of the First 4H-Sic Avalanche Photodiodes

4H-Sic Visible Blind UV Avalanche Photodiode

Fabrication and Characterization of a New Type 4×4 Arrayed Position-Sensitive Detector

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Recent Progress of SiC UV Single Photon Counting Avalanche Photodiodes

Free-running 4H-Sic Single-Photon Detector with Ultralow Afterpulse Probability at 266 Nm

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

High-Temperature Single Photon Detection Performance of 4H-Sic Avalanche Photodiodes

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Performance of Thin 4H-Sic UV Avalanche Photodiodes

128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

4H-Sic PIN Recessed-Window Avalanche Photodiode with High Quantum Efficiency

Demonstration of a Solar-Blind Single-Photon Imaging Lidar Based on SiC Ultraviolet Avalanche Photodiodes

Visible-Blind Photodetector Based on P-I-n Junction 4H-Sic Vertical Nanocone Array

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection