Abstract:Silicon carbide (SiC) semiconductors with a wide bandgap have attracted much attention because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect ultraviolet (UV) light without the ability to discriminate wavelength. Here, using the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device's external quantum efficiency spectrum, inducing a full width at half-maximum of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the device has a photo-to-dark current ratio as high as 4 x 10(7), superior to the performance of most reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW cm(-2), more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperatures of 350 degrees C, demonstrating bright prospects in harsh industrial conditions.

4H-Sic Visible Blind UV Avalanche Photodiode

Demonstration of the First 4H-Sic Avalanche Photodiodes

Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

Performance of Thin 4H-Sic UV Avalanche Photodiodes

Low-noise Visible-Blind UV Avalanche Photodiodes with Edge Terminated by 2° Positive Bevel

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Design And Fabrication Of 4h-Sic Apd Linear Arrays

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

4H-Sic PIN Recessed-Window Avalanche Photodiode with High Quantum Efficiency

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

4H-Sic Avalanche Photodiode with Multistep Junction Extension Termination

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

Multiplication and Excess Noise Characteristics of Thin 4H-Sic UV Avalanche Photodiodes

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area.

Passive Quenching Electronics for Geiger Mode 4H-Sic Avalanche Photodiodes