Abstract:Ultraviolet (UV) photodetectors have been fabricated on a graphene/4H‐SiC wafer. In this device, the electrical doping in the graphene layer, under the gate, is realized by changing the gate voltage while the optical doping in the graphene layer outside the gate region is realized through the photogenerated carrier injection from SiC, by laser excitation at 325 nm. This kind of dual modulation of optical and electric fields ultimately results in the formation of a planar n–p–n or n–n–n junction in the graphene layer. The photoresponse results demonstrate that the planar n–p–n junction is formed at the negative gate voltage, and facilitates negative photoconductivity. The n–n–n junction is formed at the positive gate voltage and facilitates normal photoconductivity. The maximum responsivity, which is attributable to the high photoconductive gain in the planar n–n–n junction, is 254.1A W−1, at drain‐source voltage of −3 V and gate‐source voltage of 3 V. Based on these results, the estimated lifetime of the electrons in the graphene channel extends greatly to more than four orders of magnitude longer than that in the isolated graphene. The above results prove that this graphene/4H‐SiC combined structure possesses great potential in practical UV‐detection applications.

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Resonant-Cavity-Enhanced 4H-SiC Thin Film MSM UV Photodetectors on SiO 2 /Si Substrates

Demonstration of 4H-Sic UV Single Photon Counting Avalanche Photodiode

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

Demonstration of the First 4H-Sic Avalanche Photodiodes

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

4H-Sic Visible Blind UV Avalanche Photodiode

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Bidirectional Bias Response Ultraviolet Phototransistors With 4H-SiC NPN Multi-Layer Structure