Abstract:The development of hetero-structured based UV photodiode is a rapidly growing interest in the area of optoelectronic applications. In recent years, one of the next generation semiconductor material zirconium dioxide (ZrO 2 ), has attracted much attention for UV photodiode applications. The curent research work focuses on the fabrication of ultraviolet (UV) photodetectors using ZrO 2 nanocrystals with different molar concentrations. Using the co-precipitation method, ZrO 2 nanocrystals were formed onto n-Si substrate. The prepared ZrO 2 nanocrystals were characterized by XRD, UV–visible spectroscopy, FeSEM, HRTEM, PL spectroscopic analysis. The structural analysis of ZrO 2 nanoparticles shows the cubic space groups with ((Fm-3m, Z = 4) and (Im-3m, Z = 1) respectively. The morphological analysis reveals the irregular shape and highly agglomerated. The TEM and HR-TEM images, and SAED pattern of ZrO 2 NPs were obtained at higher mole concentration. The optical energy band gap of ZrO 2 nanocrystals were determined in between 3.12 and 2.86 eV. The PL emission spectrum of ZrO 2 nanoparticles shows highly intensive emission bands between 360 nm and 520 nm. The optimum ZrO 2 (0.3 M) nanocrystal layers were formed onto n-Si substrate which was stacked between top and bottom Ag electrodes. The current-voltage measurements (I–V) plots and ln J-V plots characteristics of the fabricated Ag/p-ZrO 2 /n-Si/Ag devices were investigated under dark and UV illumination. The p -ZrO 2 /n-Si junction diodes exhibit the ideal rectifying function at higher molar concentration of ZrO 2 diode, and the reverse saturation with maximum photo sensitivity was investigated.

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