Abstract:A stable pH‐universal photoelectrochemical photodetector is designed based on a whole single‐crystal integrated self‐supporting 4H‐SiC nanopore array photoelectrode. The device delivers excellent photodetection performance with high responsivity, detectivity, external quantum efficiency, and rapid rise/decay times of 218.77 mA W−1, 6.64 × 1013 Jones, 72.47%, and 17/48 ms, respectively, under 375 nm light illumination. Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high‐performance pH‐universal PEC ultraviolet (UV) PD based on a whole single‐crystal integrated self‐supporting 4H‐SiC nanopore array photoelectrode is constructed, which is fabricated using a two‐step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W−1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm−2 and a bias voltage of 0.6 V, which is fall in the state‐of‐the‐art of the wide‐bandgap semiconductor‐based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long‐term operational stability in pH‐universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self‐supporting configuration, and single‐crystal structure of the whole photoelectrode.

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

High-Performance 4H-SiC Schottky Photodiode With Semitransparent Grid-Electrode for EUV Detection

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

4H-Sic Δn-I-p Extreme Ultraviolet Detector with Gradient Doping-Induced Surface Junction

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area.

Study on SiC UV/EUV Coaxial Photodetector

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Si-CMOS-compatible 2D PtSe2-based Self-Driven Photodetector with Ultrahigh Responsivity and Specific Detectivity

High‐Performance Broadband Photodetector with Lateral Contact of n+‐Si Wafer by Two Asymmetric Work‐Function Electrodes

Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area

Resonant-Cavity-Enhanced 4H-SiC Thin Film MSM UV Photodetectors on SiO 2 /Si Substrates

High‐Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH‐Universal Adaptability Based on Whole Single‐Crystal Integrated Self‐Supporting 4H‐SiC Nanoarrays

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions

Over 98% Linearity 4H-Sic Ultraviolet Position Sensitive Detector