Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Development of Ion-Implanted Si-PIN Semiconductor Radiation Detector

A Dual P‐layer 4h‐sic P‐i‐n Photodetector for the Detection from Extreme Ultraviolet to Ultraviolet‐a

High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

Fully Depleted SOI Pixel Detector with Multijunction Structure in P-Type Substrate

Study on 4H-SiC Schottky Diode Alpha-particle Detector

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

4H-Sic Δn-I-p Extreme Ultraviolet Detector with Gradient Doping-Induced Surface Junction

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Study of the characteristics of an irradiated 4H-SiC charge particle detector

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

Development of High Performance PIN-Silicon Detector and Its Application in Radioactive Beam Physical Experiment

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Fabrication of Silicon PIN Diode with SiGe Junction for Soft X-Ray Detector Using Low-Temperature Technology