High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer

Qing Liu,Dong Zhou,Weizong Xu,Dunjun Chen,Fangfang Ren,Rong Zhang,Youdou Zheng,Hai Lu
DOI: https://doi.org/10.1116/6.0000829
2021-01-01
Abstract:In this work, a large size x-ray detector with a 25 mm2 active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4 × 104 μC Gy−1 cm−2, good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray photons is further realized with energy resolutions of 1.1 and 4.9 keV at 5.9 and 59.5 keV, respectively. This work thus suggests the significant potentials of wide-bandgap SiC semiconductor for photon-resolved x-ray detection in a harsh environment.
What problem does this paper attempt to address?